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Journal Articles

Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si$$<$$100$$>$$ systems

Fujieda, Shinji*; Miura, Yoshinao*; Saito, Motofumi*; Teraoka, Yuden; Yoshigoe, Akitaka

Microelectronics Reliability, 45(1), p.57 - 64, 2005/01

https://doi.org/10.1016/j.microrel.2004.02.017
 Times Cited Count：11 Percentile：51.37(Engineering, Electrical & Electronic)

To characterize the interface defects that are responsible for the negative-bias temperature instability (NBTI) of a thin plasma-nitrided SiON/Si system, we carried out inerface trap density measurements, electron-spin resonance spectroscopy and synchrotron radiation XPS. The NBTI was shown to occur mainly through the dehydrogenation of the interfacial Si dangling bonds (P$$_{b}$$ defects). Although we suggest that non- P$$_{b}$$ defects are also generated by the negative-bias temperature stress, nitrogen dangling bonds do not seem to be included. The plasma-nitridation process was confirmed to generate sub-oxides at the interface and thus increase the interface trap density. Furthermore, it was found that the nitridation induces another type of P$$_{b1}$$ defect than that at pure-SiO$$_{2}$$/Si interfacec. Such an increase and structural change of the interfacial defects are likely the causes of the nitridation-enhanced NBTI.

Journal Articles

Performance of $$gamma$$ lrradiated p-channel 6H-SiC MOSFETs; High total dose

Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi

IEEE Transactions on Nuclear Science, 50(1), p.194 - 200, 2003/02

https://doi.org/10.1109/TNS.2002.807853
 Times Cited Count：27 Percentile：84.38(Engineering, Electrical & Electronic)

p-channel SiC MOSFETs were fabricated on n-type 6H-SiC epitaxial layer. The effects of $$gamma$$-ray irradiation on the charecteristics of the MOSFETs were studied. Threshold voltage shifts to negative voltage side and the channel mobility reduces due to irradiation. Although the degradation of the channel mobility of the p-channel SiC MOSFETs is 10 times faster than n-channel SiC MOSFETs, p-channel SiC MOSFETs show 100 times stronger radiation resistance than Si MOSFETs. The values of interface traps and oxide-trapped-charge generated sue to irradiation were estimated from the subthreshold characteristics. As the result,it is concluded that the decrease in channel mobility can be explained by the generation of interface traps.

Journal Articles

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Nemoto, N.*; Ito, Hisayoshi; Okumura, Hajime*; *; Yoshida, Sadafumi*; Nashiyama, Isamu

Mater. Sci. Eng., B, 47(3), p.218 - 223, 1997/00

https://doi.org/10.1016/S0921-5107(97)00034-2
 Times Cited Count：1 Percentile：11.83(Materials Science, Multidisciplinary)

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